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  • image of WAFER DIE>10CTQ150
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10CTQ150
VOLTAGE REGULAT
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-
: 1.56

1

1.56

1.56

image of WAFER DIE>10CTQ150
image of WAFER DIE>10CTQ150
10CTQ150
10CTQ150
VOLTAGE REGULAT
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YES
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SCHOTTKY RECTIFIER
10 Amp
Bulletin PD-2.291 rev. C 03/03
1
www.irf.com
This center tap Schottky ectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse
battery protection.
175° C T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/ Features
Major Ratings and Characteristics
I
F(AV)
Rectangular 10 A
waveform
V
RRM
150 V
I
FSM
@ tp = 5 µs sine 620 A
V
F
@
5 Apk, T
J
= 125°C 0.73 V
(per leg)
T
J
range - 55 to 175 °C
Characteristics Values Units
10CTQ150
10CTQ150S
10CTQ150-1
Case Styles
10CTQ150 10CTQ150S 10CTQ150 -1
TO-220 D
2
PAK
Anode
1
3
2
Base
Common
Cathode
2
A
node
Common
Cathode
TO-262
Anode
1
3
2
Base
Common
Cathode
2
A
node
Common
Cathode
Anode
1
3
2
Base
Common
Cathode
2
A
node
Common
Cathode
10CTQ150, 10CTQ150S, 10CTQ150-1
2
Bulletin PD-2.291 rev. C 03/03
www.irf.com
I
F(AV)
Max. Average Forward (Per Leg) 5 A 50% duty cycle @ T
C
= 155°C, rectangular wave form
Current * See Fig. 5 (Per Device) 10
I
FSM
Max. Peak One Cycle Non-Repetitive 620 5µs Sine or 3µs Rect. pulse
Surge Current (Per Leg) * See Fig. 7 115 10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy 6.75 mJ T
J
= 25 °C, I
AS
= 0.30 Amps, L = 150 mH
(Per Leg)
I
AR
Repetitive Avalanche Current 0.30 A Current decaying linearly to zero in 1 µsec
(Per Leg) Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Absolute Maximum Ratings
Parameters Values Units Conditions
A
T
J
Max. Junction Temperature Range -55 to 175 °C
T
stg
Max. Storage Temperature Range -55 to 175 °C
R
thJC
Max. Thermal Resistance Junction 3.50 °C/W DC operation
to Case (Per Leg)
R
thJC
Max. Thermal Resistance Junction 1.75 °C/W DC operation
to Case (Per Package)
R
thCS
Typical Thermal Resistance, Case 0.50 °C/W Mounting surface , smooth and greased
to Heatsink (only for TO-220)
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10)
Thermal-Mechanical Specifications
Kg-cm
(Ibf-in)
Parameters Values Units Conditions
V
FM
Max. Forward Voltage Drop 0.93 V @ 5A
(Per Leg) * See Fig. 1 (1) 1.10 V @ 10A
0.73 V @ 5A
0.86 V @ 10A
I
RM
Max. Reverse Leakage Current 0.05 mA T
J
= 25 °C
(Per Leg) * See Fig. 2 (1) 7 mA T
J
= 125 °C
V
F(TO)
Threshold Voltage 0.468 V T
J
= T
J
max.
r
t
Forward Slope Resistance 28 m
C
T
Max. Junction Capacitance(Per Leg) 200 pF V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25°C
L
S
Typical Series Inductance (Per Leg) 8.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ µs
(Rated V
R
)
T
J
= 25 °C
T
J
= 125 °C
Electrical Specifications
(1) Pulse Width < 300µs, Duty Cycle <2%
V
R
= rated V
R
Parameters Values Units Conditions
150
Parameters
10CTQ150
10CTQ150S
10CTQ150-1
Following any rated
load condition and with
rated V
RRM
applied
3
Bulletin PD-2.291 rev. C 03/03
www.irf.com
10CTQ150, 10CTQ150S, 10CTQ150-1
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
Fig. 1 - Max. Forward Voltage Drop
Characteristics (Per Leg)
1
10
100
00.511.522.53
F
FM
Forward Voltage Drop - V (V)
Instantaneous Forward Current - I (A)
T = 175°C
T = 125°C
T = 25°C
J
J
J
0.0001
0.001
0.01
0.1
1
10
100
0 255075100125150
R
R
T = 175°C
150°C
125°C
100°C
75°C
50°C
25°C
J
Reverse Current - I (mA)
Reverse Voltage - V (V)
10
100
1000
0 20 40 60 80 100 120 140 160
T = 25°C
J
R
T
Junction Capacitance - C (pF)
Reverse Voltage - V (V)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
thJC
t , Rectangular Pulse Duration (Seconds)
Si n g l e Pu l se
(The rma l Re sista nc e )
1
Thermal Impedanc e Z (°C/W)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
thJC
C
DM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
2
t
1
t
P
DM
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