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VS-40TPS16-M3
THYRISTOR
Vishay
Thyristor SCR 1
-
-
image of TRANSISTOR>VS-40TPS16-M3
image of TRANSISTOR>VS-40TPS16-M3
VS-40TPS16-M3
VS-40TPS16-M3
THYRISTOR
Vishay
Thyristor SCR 1
-
YES
-
VS-40TPS16PbF, VS-40TPS16-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Nov-11
1
Document Number: 94389
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Phase Control Thyristor, 40 A
FEATURES
High voltage (up to 1600 V)
Designed and qualified according to
JEDEC-JESD47
Compliant to RoHS Directive 2002/95/EC
125 °C max. operating junction temperature
Halogen-free according to IEC 61249-2-21
definition (-M3 only)
APPLICATIONS
Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
DESCRIPTION
The VS-40TPS16... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
PRODUCT SUMMARY
Package TO-247AC
Diode variation Single SCR
I
T(AV)
35 A
V
DRM
/V
RRM
1600 V
V
TM
1.45 V
I
GT
150 mA
T
J
- 40 °C to 125 °C
(G) 3
2
(A)
1 (K)
TO-247AC
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
Sinusoidal waveform 35
A
I
RMS
55
V
RRM
/V
DRM
1600 V
I
TSM
500 A
V
T
40 A, T
J
= 25 °C 1.45 V
dV/dt 1000 V/μs
dI/dt 100 A/μs
T
J
- 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
/V
DRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
/I
DRM
AT 125 °C
mA
VS-40TPS16PbF, VS-40TPS16-M3 1600 1700 10
VS-40TPS16PbF, VS-40TPS16-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Nov-11
2
Document Number: 94389
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
T(AV)
T
C
= 79 °C, 180° conduction half sine wave 35
A
Maximum continuous RMS
on-state current as AC switch
I
T(RMS)
55
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
10 ms sine pulse, rated V
RRM
applied
Initial T
J
=
T
J
maximum
500
10 ms sine pulse, no voltage reapplied 600
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 1250
A
2
s
10 ms sine pulse, no voltage reapplied 1760
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 12 500 A
2
s
Low level value of threshold voltage V
T(TO)1
T
J
= 125 °C
1.02
V
High level value of threshold voltage V
T(TO)2
1.23
Low level value of on-state slope resistance r
t1
9.74
m
High level value of on-state slope resistance r
t2
7.50
Maximum peak on-state voltage V
TM
110 A, T
J
= 25 °C 1.85 V
Maximum rate of rise of turned-on current dI/dt T
J
= 25 °C 100 A/µs
Maximum holding current I
H
150
mA
Maximum latching current I
L
300
Maximum reverse and direct leakage current I
RRM
/I
DRM
T
J
= 25 °C
V
R
= Rated V
RRM
/V
DRM
0.5
T
J
= 125 °C 10
Maximum rate of rise of off-state voltage dV/dt T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
-k = Open 1000 V/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative gate voltage - V
GM
10
V
Maximum required DC gate
voltage to trigger
V
GT
T
J
= - 40 °C
Anode supply = 6 V resistive load
4.0
T
J
= 25 °C 2.5
T
J
= 125 °C 1.7
Maximum required DC gate current to trigger I
GT
T
J
= - 40 °C 270
mA
T
J
= 25 °C 150
T
J
= 125 °C 80
T
J
= 25 °C, for 40TPS08A 40
Maximum DC gate voltage not to trigger V
GD
T
J
= 125 °C, V
DRM
= Rated value
0.25 V
Maximum DC gate current not to trigger I
GD
6mA
VS-40TPS16PbF, VS-40TPS16-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Nov-11
3
Document Number: 94389
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40 to 125 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.6
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
40
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.2
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC 40TPS16
70
80
90
100
110
120
130
010203040
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average On-state Current (A)
40TPS.. Series
R (DC) = 0.6 °C/ W
thJC
70
80
90
100
110
120
130
0 102030405060
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case TemperatureC)
Conduction Period
40TPS.. Serie s
R (DC) = 0.6 °C/ W
thJC
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
4 0 TPS. . Se r i e s
T = 12C
J
0
10
20
30
40
50
60
70
80
0 102030405060
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
40TPS.. Series
T = 125 °C
J
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